CEB603ALS2 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
30V , 25A , RDS(ON)=22m Ω @VGS=10V. RDS(ON)=40mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & T.
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